Fabrication of a rutile titanium dioxide thin film heterostructure using ion-implantation with Cu-Sn bonding
نویسندگان
چکیده
منابع مشابه
Fabrication of vertical thin-GaN light-emitting diode by low-temperature Cu/Sn/Ag wafer bonding
Vertical thin-GaN LED was successfully fabricated on the GaN LED epi-layers grown on the patternedsapphire substrate with the pyramidal pattern by low-temperature Cu/Sn/Ag wafer bonding at 150 C. An inverted pyramidal pattern formed on the n-GaN surface after the GaN epi-layer was transferred onto Si wafer, which resulted from the pyramidal pattern on the patterned-sapphire substrate. The inver...
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ژورنال
عنوان ژورنال: Optical Materials Express
سال: 2021
ISSN: 2159-3930
DOI: 10.1364/ome.421763